发明名称 |
GAS DISTRIBUTOR FOR SEMICONDUCTOR PROCESSING CHAMBER |
摘要 |
PROBLEM TO BE SOLVED: To provide a processing chamber including a gas distributer for uniformly spraying processing gas in the chamber for a substrate having a large diameter.SOLUTION: This processing chamber (25) for processing a semiconductor substrate includes a support device for supporting a substrate (50). A gas distributor (90) for introducing processing gas into the chamber (25) includes a gas nozzle for injecting the processing gas at a predetermined inclined angle relative to a plane of the substrate (50) into the chamber (25). Optionally, a gas flow controller (100) controls and pulses the flow of the processing gas through one or more gas nozzles (140). An exhaust is used to exhaust the processing gas from the chamber (25). |
申请公布号 |
JP2011018938(A) |
申请公布日期 |
2011.01.27 |
申请号 |
JP20100215422 |
申请日期 |
2010.09.27 |
申请人 |
APPLIED MATERIALS INC |
发明人 |
KHOLODENKO ARNOLD;LUBOMIRSKY DMITRY;SHIAU GUANG-JYE;LOEWENHARDT PETER K;SHAMOUILIAN SHAMOUIL |
分类号 |
H01L21/3065;H05H1/46;C23C16/455;H01J37/32;H01L21/302;H01L21/304;H01L21/31 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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