发明名称 |
APPARATUS AND METHOD FOR DETECTING WORD LINE LEAKAGE IN MEMORY DEVICES |
摘要 |
According to an embodiment of the present invention, a method for detecting word line leakage in a memory device includes coupling a first word line in the memory device to a voltage source while coupling a second word line in the memory device to a ground level voltage. Next, the first word line is decoupled from the voltage source. The method also includes comparing a current of the first word line with a predetermined reference current for determining a leakage condition of the word line.
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申请公布号 |
US2011019487(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100899439 |
申请日期 |
2010.10.06 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN HAN-SUNG;LO SU-CHUEH;HUNG CHUN-HSIUNG;KUO NAI-PING;HSIEH MING-CHIH;TSAI WEN-PIN |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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