发明名称 APPARATUS AND METHOD FOR DETECTING WORD LINE LEAKAGE IN MEMORY DEVICES
摘要 According to an embodiment of the present invention, a method for detecting word line leakage in a memory device includes coupling a first word line in the memory device to a voltage source while coupling a second word line in the memory device to a ground level voltage. Next, the first word line is decoupled from the voltage source. The method also includes comparing a current of the first word line with a predetermined reference current for determining a leakage condition of the word line.
申请公布号 US2011019487(A1) 申请公布日期 2011.01.27
申请号 US20100899439 申请日期 2010.10.06
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN HAN-SUNG;LO SU-CHUEH;HUNG CHUN-HSIUNG;KUO NAI-PING;HSIEH MING-CHIH;TSAI WEN-PIN
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址