A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).
申请公布号
WO2011011140(A2)
申请公布日期
2011.01.27
申请号
WO2010US39411
申请日期
2010.06.22
申请人
DOW CORNING CORPORATION;FU, PENG-FEI;MOYER, ERIC SCOTT;SUHR, JASON, D.