发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property. |
申请公布号 |
WO2011010543(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
WO2010JP61299 |
申请日期 |
2010.06.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;SAKATA, JUNICHIRO;MIYAKE, HIROYUKI;KUWABARA, HIDEAKI;TAKAHASHI, TATSUYA |
发明人 |
YAMAZAKI, SHUNPEI;SAKATA, JUNICHIRO;MIYAKE, HIROYUKI;KUWABARA, HIDEAKI;TAKAHASHI, TATSUYA |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/28;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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