| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitive coupling type plasma treatment apparatus for sputtering film deposition, wherein an ion flux with a uniform high concentration is formed on the surface of a substrate, without causing re-deposition to a target.SOLUTION: The plasma treatment apparatus is equipped with: an upper electrode 1 provided with a capacitive coupling type mechanism; a target member 2 which is fitted to the upper electrode and made from a nonmagnetic substance; a plurality of magnets 6 which are arranged on the upper surface of the target member, and between the two of them, have equal distance and also have alternately changing magnetic pole polarities; a lower electrode 3 arranged in parallel with the upper electrode; a wafer 17 mounted on the lower electrode; and a high frequency power source 16 which is operated at a frequency in the range of 10 to 300 MHz and connected to the upper electrode via a matching circuit 15. |
