发明名称 METHOD OF MANUFACTURING MEMS DEVICE HAVING LOW CONTACT RESISTANCE, AND DEVICE OBTAINED BY THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of forming, between a silicon germanium layer and a layer connected to the silicon germanium layer, such as a CMOS metal layer or other silicon germanium layer, a low resistance contact passing through an opening in a dielectric layer stack for separating these two layers in an MEMS device.SOLUTION: An interface layer 14 as an intermediate layer is formed in the opening of the dielectric layer 6. The bottom of the opening and a sidewall of the opening are covered with the interface layer. The intermediate layer serves an interface between a silicon germanium MEMS electrode 8 and a silicon germanium structure layer 4 containing MEMS ingredients. The intermediately layer, namely, the interface layer 14 is composed of a TiN layer or a TaN layer.
申请公布号 JP2011016219(A) 申请公布日期 2011.01.27
申请号 JP20100139573 申请日期 2010.06.18
申请人 IMEC;KU LEUVEN RESEARCH & DEVELOPMENT 发明人 JAIN AJAY;SEVERI SIMONE;CLAES GERT;HECK JOHN
分类号 B81B7/02;B81C1/00 主分类号 B81B7/02
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