摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming, between a silicon germanium layer and a layer connected to the silicon germanium layer, such as a CMOS metal layer or other silicon germanium layer, a low resistance contact passing through an opening in a dielectric layer stack for separating these two layers in an MEMS device.SOLUTION: An interface layer 14 as an intermediate layer is formed in the opening of the dielectric layer 6. The bottom of the opening and a sidewall of the opening are covered with the interface layer. The intermediate layer serves an interface between a silicon germanium MEMS electrode 8 and a silicon germanium structure layer 4 containing MEMS ingredients. The intermediately layer, namely, the interface layer 14 is composed of a TiN layer or a TaN layer. |