发明名称 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES INCLUDING AZEOTROPIC DRYING PROCESSES
摘要 Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the steps of providing a partially-completed semiconductor device including a first feature formed in a porous material, wet cleaning the partially-completed semiconductor device with an aqueous cleaning solvent, exposing the partially-completed semiconductor device to a liquid chemical that forms an azeotropic mixture with water, and inducing evaporation of the azeotropic mixture to remove residual water from within the porous material absorbed during the wet cleaning step.
申请公布号 US2011021028(A1) 申请公布日期 2011.01.27
申请号 US20090508417 申请日期 2009.07.23
申请人 GLOBALFOUNDRIES INC. 发明人 RYAN E. TODD
分类号 H01L21/306 主分类号 H01L21/306
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