发明名称 METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES AND DEVICES USING QUANTUM DOT STRUCTURES AND RELATED STRUCTURES
摘要 Methods of fabricating photovoltaic devices include forming a plurality of subcells in a vertically stacked arrangement on the semiconductor material, each of the subcells being formed at a different temperature than an adjacent subcell such that the adjacent subcells have differing effective band gaps. The methods of fabricating also include inverting the structure, attaching another substrate to the second semiconductor material, and removing the substrate. For example, each of the subcells may comprise a III nitride material, and each subsequent subcell may include an indium content different than the adjacent subcell. Novel structures may be formed using such methods.
申请公布号 WO2011011111(A1) 申请公布日期 2011.01.27
申请号 WO2010US36162 申请日期 2010.05.26
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ARENA, CHANTAL;MCFELEA, HEATHER 发明人 ARENA, CHANTAL;MCFELEA, HEATHER
分类号 H01L31/0304;H01L31/0352;H01L31/04;H01L31/18 主分类号 H01L31/0304
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