SEMICONDUCTOR DEVICE

摘要

A semiconductor device which realizes a dynamic threshold operation based on the use of a bulk semiconductor substrate is provided. The semiconductor substrate comprises: a well region 11 of a first conductivity type; a source region 12 and a drain region 13 of a second conductivity type provided in the vicinity of the surface of the well region 11 of the first conductivity type; a channel region 14 provided between the regions 12 and 13; and a gate insulation film 15 and a gate electrode 16 deposited in this order on the channel region 14, wherein the gate electrode 16 is connected to the well region 11 via a contact hole (not shown) in the gate insulation film 15. In this transistor, the resistance of the well region 11 can be reduced by a factor of about ten to a hundred. <IMAGE>