| 发明名称 |
COMPLETE RECRYSTALLIZATION OF SEMICONDUCTOR WAFERS |
| 摘要 |
<p>The invention relates to a device and method for recrystallizing a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.</p> |
| 申请公布号 |
WO2011010074(A1) |
申请公布日期 |
2011.01.27 |
| 申请号 |
WO2010FR51559 |
申请日期 |
2010.07.22 |
| 申请人 |
S'TILE;STRABONI, ALAIN |
发明人 |
STRABONI, ALAIN |
| 分类号 |
H01L21/324;H01L21/02;H01L21/687 |
主分类号 |
H01L21/324 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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