| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to increase drain-source leakage current by preventing the generation of punch-through. CONSTITUTION: A gate trench(119) is formed in an epitaxial layer which is arranged on the upper side of a substrate. A body(117) is formed in the epitaxial layer. A gate poly(127) is formed within the gate trench. A pre-metal dielectric pattern is formed to be in contact with a part of the uppermost face of the body. A metal layer is deposited on the entire surface of the substrate including the pre-metal dielectric pattern.</p> |
