发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that includes a process capable of easily and certainly insulating and isolating a plating lead used in a plating treatment process from an electrode in a substrate and a wiring pattern.SOLUTION: The LED lamp 11 includes: the substrate 12; the wiring pattern 17 formed on the substrate 12; and the plating lead 21 for a plating treatment being extended from one end of the wiring pattern 17 and exposing a front end to the outer peripheral surface of the substrate 12. In the LED lamp 11, a common contact 20 connected to the plating lead 21 from one end of the wiring pattern 17, is mounted on the substrate 12, and the plating treatment from the plating lead 21 via the common contact 20 is completed. In the LED lamp, the wiring pattern 17 is isolated electrically from the plating lead 21 by insulating the common contact 20.
申请公布号 JP2011018801(A) 申请公布日期 2011.01.27
申请号 JP20090162961 申请日期 2009.07.09
申请人 CITIZEN ELECTRONICS CO LTD;CITIZEN HOLDINGS CO LTD 发明人 KADOTANI NORIKAZU;IMAI SADATO;ISHIZAKA MITSUSATO
分类号 H01L33/48 主分类号 H01L33/48
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