| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device with high power generation efficiency in which laser etching is easy.SOLUTION: The method of manufacturing the photoelectric conversion device 100 includes a process of forming two photoelectric conversion layers 3 and a back electrode layer 4 on a substrate 1, wherein a back electrode forming process includes a back transparent electrode layer forming process and a Cu thin-film forming process, wherein the Cu thin-film forming process includes an exhaustion process and film forming process in order, reached pressure in the exhaustion process being ≤2×10Pa, and a temperature in the film forming process being 120 to 240°C. |
