发明名称 SPUTTERING SYSTEM AND DEVICE FOR PRODUCING LIQUID CRYSTAL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a sputtering system which can secure a satisfactory film deposition rate in a reactive sputtering system where sputtering particles are fed from the oblique direction of a substrate.SOLUTION: The sputtering system is provided with: a film deposition chamber 2 having a substrate holder 6 holding a substrate W and provided with the substrate holder 6 so as to be conveyable; and a sputtering chamber 3 communicated with the film deposition chamber 2 and disposed with a target 10. Wherein, a reaction formation film is deposited on the substrate W by the reaction between sputtering particles released from the sputtering chamber 3 to the film deposition chamber 2 and a reaction gas, the target 10 is arranged obliquely to the carrier passage of the substrate holder 6, a box body 20 having a hole part larger than the outer circumference of the target 10 is provided at the sputtering chamber 3, the surface of the target 10 turns to the inner face of the body 20 through the first opening part 21 of the box body 20, and a part of the face of the box body 20 confronted with the target 10 is provided with a second opening part 22 through which the sputtering particles pass.
申请公布号 JP2011017034(A) 申请公布日期 2011.01.27
申请号 JP20090160497 申请日期 2009.07.07
申请人 SEIKO EPSON CORP 发明人 FUKADA SHINICHI
分类号 C23C14/34;G02F1/13;G02F1/1337 主分类号 C23C14/34
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