发明名称 |
NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE DEVICES |
摘要 |
There is provided a method of producing a nitride-based compound semiconductor device that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. The method of producing a nitride-based compound semiconductor device in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, the nitride-based compound semiconductor is cleaned with a cleaning liquid having a pH of 7.1 or higher ultrasonically.
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申请公布号 |
US2011018105(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100890129 |
申请日期 |
2010.09.24 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HACHIGO AKIHIRO;NISHIURA TAKAYUKI |
分类号 |
H01L21/30;H01L21/306;H01L29/34 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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地址 |
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