发明名称 VERFAHREN ZUM ABTRENNEN VON HOCHTEMPERATURFILMEN UND/ODER VORRICHTUNGEN VON METALLSUBSTRATEN
摘要 <p>Films and electronic devices can be released from metallic substrates by: (i) applying a coating of a polysilsesquioxane resin to a metallic substrate, (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin, (iii) applying a polymeric film to the cured coating on the metallic substrate, (iv) further heating the coated metallic substrate to a temperature sufficient to cure the polymeric film, (v) optionally fabricating electronic devices on the polymeric film, and (vi) releasing the polymeric film from the metallic substrate.</p>
申请公布号 DE602006018976(D1) 申请公布日期 2011.01.27
申请号 DE20066018976T 申请日期 2006.08.30
申请人 DOW CORNING CORP. 发明人 ANDERSON, NICOLE;KATSOULIS, DIMITRIS ELIAS;ZHU, BIZHONG
分类号 C09J7/00 主分类号 C09J7/00
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