| 摘要 |
PURPOSE: A method for fabricating of a CMOS image sensor is provided to minimize optical loss due to a gap by forming a SiO2 along the line of a micro lens. CONSTITUTION: An inter-layer insulating film(14) is formed over a semiconductor substrate. A color filter layer(16) is formed on the inter-layer insulating film. A photoresist for the micro-lens is coated on the color filter layer. The photoresist is patterned through an exposure and development process to form a photoresist pattern. A magnesium material is coated on the photoresist pattern. A micro-lens is formed on the semiconductor substrate through a RTP(Rapid thermal processing).
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