发明名称 ACCELERATED PARTICLE AND HIGH ENERGY RADIATION SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a monolithic sensor which is capable of withstanding incident accelerated particles and high energy radiation.SOLUTION: An accelerated electron detector includes an array of monolithic sensors in a CMOS structure, each sensor including a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) by the epi layer (11). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region (15) beneath the p+ well (12) which establishes within the epi layer a depletion layer so that carriers generated in the epi layer are caused to drift to the n+ well (13) on application of a biasing voltage charge. The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes.
申请公布号 JP2011017722(A) 申请公布日期 2011.01.27
申请号 JP20100218034 申请日期 2010.09.29
申请人 SCIENCE & TECHNOLOGY FACILITIES COUNCIL 发明人 TURCHETTA RENATO ANDREA DANILO;VILLANI GIULIO ENRICO;PRYDDERCH MARK LYNDON
分类号 G01T1/24;G01J1/00;H01J37/244;H01L27/146;H01L31/09 主分类号 G01T1/24
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