发明名称 |
ACCELERATED PARTICLE AND HIGH ENERGY RADIATION SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a monolithic sensor which is capable of withstanding incident accelerated particles and high energy radiation.SOLUTION: An accelerated electron detector includes an array of monolithic sensors in a CMOS structure, each sensor including a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) by the epi layer (11). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region (15) beneath the p+ well (12) which establishes within the epi layer a depletion layer so that carriers generated in the epi layer are caused to drift to the n+ well (13) on application of a biasing voltage charge. The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes. |
申请公布号 |
JP2011017722(A) |
申请公布日期 |
2011.01.27 |
申请号 |
JP20100218034 |
申请日期 |
2010.09.29 |
申请人 |
SCIENCE & TECHNOLOGY FACILITIES COUNCIL |
发明人 |
TURCHETTA RENATO ANDREA DANILO;VILLANI GIULIO ENRICO;PRYDDERCH MARK LYNDON |
分类号 |
G01T1/24;G01J1/00;H01J37/244;H01L27/146;H01L31/09 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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