发明名称 |
Bipolar Transistor, Band-Gap Reference Circuit and Virtual Ground Reference Circuit |
摘要 |
The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact.
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申请公布号 |
US2011018608(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100842903 |
申请日期 |
2010.07.23 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
CHI MIN-HWA;CHING LIHYING;XIAO DEYUAN |
分类号 |
H03K17/60;G05F1/10;H01L21/331;H01L29/70 |
主分类号 |
H03K17/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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