发明名称 SELECTIVE PLANARIZATION METHOD AND DEVICES FABRICATED ON PLANARIZED STRUCTURES
摘要 A method and system for treating a surface structure of a workpiece. The method provides a carrier-gel to the surface structure of the workpiece. The carrier-gel includes an etchant for selectively etching a first material of the surface structure and has a gel particle size larger than the surface structure. The method etches the first material from the surface structure by a reaction of the etchant included in the carrier-gel with the first material of the surface structure in order to remove a part of the first material from the surface structure for subsequent device fabrication. The system includes a chemical reactor supporting the workpiece. The chemical reactor is configured to flow the carrier-gel noted to the surface structure of the workpiece in order to remove the first material from the surface structure.
申请公布号 US2011017703(A1) 申请公布日期 2011.01.27
申请号 US20090921482 申请日期 2009.02.13
申请人 RESEARCH TRIANGLE INSTITUTE 发明人 TEMPLE DOROTA;MALTA DEAN MICHAEL;BOWER CHRISTOPHER A.
分类号 H05K3/00;C23F1/04 主分类号 H05K3/00
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