| 摘要 |
Specifically, the solid-state imaging device includes: pixels each of which includes an amplifying transistor that amplifies a signal; first column signal lines each of which is connected to one of the columns of the pixels; first load transistors each of which is connected to one of the first column signal lines; a bias circuit which supplies a bias voltage to a gate of each of the first load transistors; first detection units each of which is connected to the one of the first column signal lines; a second detection unit which detects a noise component of each of the rows, the noise component occurring in each of the first column signal lines and resulting from fluctuation in the bias voltage; and a correction unit which corrects, the pixel signal detected by each of the first detection units, using the noise component detected by the second detection unit.
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