RESIST FOR ELECTRON BEAM LITHOGRAPHY, AND METHOD FOR DEVELOPING RESIST FOR ELECTRON BEAM LITHOGRAPHY

摘要

The present invention relates to a resist for electron beam lithography which has excellent sensitivity to an electron beam and a good resolution, and a method for developing the resist for electron beam lithography. The resist for electron beam lithography according to the present invention comprises a copolymer which is formed by copolymerizing a compound of formula 1, a compound of formula 2 and a compound of formula 3 and has a number average molecular weight of 500-30,000.