| 摘要 |
A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer.
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