摘要 |
<p>The method involves inserting dopants into a region at a surface (106) of a semiconductor body (100). A dopant source (104) is produced on the surface, and is structured by an etching mask, which is formed as a lacquer sample. Other dopants are inserted from the structured dopant source into the body. An isolation layer e.g. nitride layer, is applied on the body for structuring the dopant source, and is opened at certain places corresponding to the lacquer sample when removing the lacquer sample in a lift-off process. A contact metal sample is produced after removing the lacquer sample.</p> |