发明名称 Method for producing e.g. two-stage selective solar cell emitter, involves producing dopant source on surface of semiconductor body, structuring dopant source, and inserting dopants from structured dopant source into semiconductor body
摘要 <p>The method involves inserting dopants into a region at a surface (106) of a semiconductor body (100). A dopant source (104) is produced on the surface, and is structured by an etching mask, which is formed as a lacquer sample. Other dopants are inserted from the structured dopant source into the body. An isolation layer e.g. nitride layer, is applied on the body for structuring the dopant source, and is opened at certain places corresponding to the lacquer sample when removing the lacquer sample in a lift-off process. A contact metal sample is produced after removing the lacquer sample.</p>
申请公布号 DE102009034087(A1) 申请公布日期 2011.01.27
申请号 DE20091034087 申请日期 2009.07.21
申请人 SOLSOL GMBH 发明人 ROSTAN, JOHANNES
分类号 H01L31/18;H01L31/068 主分类号 H01L31/18
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