SEMICONDUCTOR DEVICES AND METHODS FORMING THEREOF

摘要

PURPOSE: A semiconductor devices and methods forming thereof are provided to implement high integration semiconductor device by enabling active patterns to share cell gate patterns in a gate laminate structure. CONSTITUTION: A gate laminate structure comprises a plurality of cells gate pattern(CG) and insulation patterns. The gate laminate structure is extended in first direction. Active patterns(121) are penetrated through the gate laminate structure and are spaced in second direction. A gate-dielectric pattern(125) is allowed in between the gate patterns and the active patterns. The gate-dielectric pattern is extended to upper side and lower side of the cell gate patterns. The active patterns shares cell gate patterns in the gate laminate structure.