| 摘要 |
<p>PURPOSE: A patterning method for manufacturing a semiconductor device is provided to improve a process margin of a photo lithography process by adding first assist bar pattern or a second assist bar to pattern a hard mask. CONSTITUTION: A first hard mask layer(30) and a second hard mask layer(40) are successively formed in a substrate. The second hard mask layer is patterned. A photosensitive pattern is formed through a photo lithography process. A second hard mask layer is removed through an etching process. The first hard mask is selectively etched by using the pattern second hard mask as an etch mask. A target layer(40) is selectively etched by using the pattern second hard mask and the first hard mask layer as an etch mask.</p> |
