APPARATUS FOR MANUFACTURING SEMICONDUCTOR EQUIPPED WITH MULTIPLE INDUCTIVE COUPLED PLASMA

摘要

PURPOSE: An apparatus is provided to form a strong magnetic field and to improve the uniformity of plasma by generating plasma with the use of MICP source instead of ICP. CONSTITUTION: A plasma etching device(10) has a structure that plural ferrite magnets are inserted into a coil of a source chamber(20). An inductive coupled source having a structure that the plural ferrite magnets are inserted is used a source for generating an etching gas by which a single layer and multiple layer membrane is etched. SF6, Cl2, CF6, HBr, N2, and O2 are used as the etching gas. The etching gas is generating with a source power of a range from 400 - 1200W and a bottom power of a range from 50 - 200W at a pressure of 1 - 20mTorr.