PLASMA ENHANCED DEPOSITION METHOD, SEMICONDUCTOR DEVICE, AND DEPOSITION DEVICE

摘要

The invention relates to a method for plasma enhanced deposition of a material layer (5), a semiconductor device and a deposition device. During the plasma enhanced deposition of the material layer (5), a first precursor (7) and a second precursor (8) are introduced in vapor form into a reaction chamber (1 ) and participate in a chemical deposition reaction, by which the material layer (5) is deposited onto a surface region (4) of a substrate (3) placed inside the reaction chamber (1 ), wherein the introduction (12) of the first precursor (7) and / or a movement (22) of the substrate (3) is performed such that the concentration of the first precursor (7) in a surrounding space (6) above the surface region (4) is varied in a pulse shape, and in the surrounding space (6) at least partly a chemical gas phase reaction of the first precursor (7) with a reactant takes place, and wherein the second precursor (8) is activated for a chemical reaction with the first precursor (7) by a plasma discharge.