摘要 |
PROBLEM TO BE SOLVED: To provide a method to process a metal film and a device region without damaging, when a wafer with the rear surface covered with the metal film is divided into individual devices, after forming an annular reinforcing section, while leaving the outer circumference section on the rear surface of the wafer.SOLUTION: A wafer 2, which includes a device region 23 sectioned by a plurality of streets formed in a lattice shape and an outer circumference surplus region 24 surrounding the device region, is divided along the streets. The processing method includes: a process of affixing a protective tape 3 on the front surface of the wafer; a process of grinding a device correspondence region on the rear surface of the wafer so as to form at a predetermined finish thickness, and for forming an annular reinforcing section while leaving the outer circumference surplus region; a process of covering the rear surface with the metal film; and a process to form a dividing groove, wherein a dividing groove is formed along the street, by having a laser beams 65 irradiated from the rear side of the wafer along the street which is detected from the front surface side of the metal-film-coated wafer. |