| 摘要 |
PROBLEM TO BE SOLVED: To grow a high quality epitaxial thin film on a silicon carbide (SiC) single crystal wafer and to produce a high performance device in a good yield using the thin film.SOLUTION: The SiC single crystal wafer used for growing the epitaxial thin film and for producing the device has a diameter of ≥50 mm, and the SiC single crystal wafer is so small in mosaic property that the deviation in the crystal orientation between optional two points in the wafer surface is ≤60 s/cm. |
