| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method which can deposit a thin film of high quality including the extremely small number of particles.SOLUTION: The advance direction of plasma generated by arc discharge in a plasma generating section 10 is bent by an oblique magnetic field in a plasma separation unit 40, and the plasma is separated from particles. Then, the plasma enters a film deposition chamber 30 via a plasma transfer unit 60 to deposit a film on a substrate 31. The plasma transfer unit 60 is separated into a plasma-separation-unit-side connecting portion 62, a film-deposition-chamber-side connecting portion 67 and a particle separation section 63 therebetween. Voltage of -5 to -15 V is applied to the plasma-separation-unit-side connecting portion 62, and grounding voltage or positive voltage is applied to the particle separation section 43. The particles having a positive charge included in the plasma are separated from the plasma by electric attractive force, and are trapped by a fin 642 or the like at the inside of a housing. |
