发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film.
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申请公布号 |
US2011018066(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100805129 |
申请日期 |
2010.07.14 |
申请人 |
ELPIDA MEMORY, INC. |
发明人 |
HORIBA SHINICHI;NAKAMURA NOBUYUKI;KITAMURA EIJI |
分类号 |
H01L27/092;H01L23/525 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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