| 摘要 |
A method for forming a thick film by magnetron sputtering is provided. The method includes forming a first thin film having residual compressive stress on a board by magnetron sputtering, forming a second thin film having tensile residual stress on the first thin film by magnetron sputtering, and depositing the thick film by repeating the forming of the first and second thin films for more than one time, so that the overall residual stress is controlled within a predetermined range. According to the method, a thick film of same or different materials can be formed, while the overall stress of the thick film is controlled within an acceptable range.
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