| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for correcting a phase-shift mask, wherein the method can accurately correct a micropattern without degrading throughput, damaging glass substrates and other half-tone patterns, or leaving correction traces, when correcting black defects in a half-tone phase-shift mask, and to provide a corrected phase-shift mask.SOLUTION: The black defects of the phase-shift mask, caused in a half-tone layer, are corrected in a step of manufacturing the half-tone phase-shift mask. The method for correcting the phase-shift mask includes temporarily stopping etching the half-tone layer 21, in the middle of the etching, to be in a half-etching state; inspecting and correcting the black defects 71 of the half-tone layer 21 in the half-etching state; and thereafter etching remaining half-tone layer 21 to a surface of the transparent substrate 11 to form the half-tone pattern 22. |
