| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element of ultra short pulse and ultra high output, capable of emitting the pulse laser beam having higher peak power notwithstanding simple configuration and structure.SOLUTION: The semiconductor laser element includes (A) a laminated structure including a first compound semiconductor layer 30 containing n-type impurity, an active layer 40 having a quantum well structure, and a second compound semiconductor layer 50 containing p-type impurity, (B) a first electrode 61 connected electrically to the first compound semiconductor layer 30, and (C) a second electrode 62 connected electrically to the second compound semiconductor layer 50. The second compound semiconductor layer 50 is provided with an electron barrier layer 53 whose thickness is 1.5×10m or greater. The semiconductor laser element is driven by the pulse current having a value ten times or more of threshold current. |
