| 摘要 |
PROBLEM TO BE SOLVED: To enhance performance of a semiconductor device having multilayer wiring using copper.SOLUTION: An insulating film Z1 for first wiring is formed on a silicon substrate, and a hole H1 for the first wiring is formed in the insulating film Z1 for the first wiring. After that, a barrier conductor film EM1 composed of a lower barrier conductor film eb1 containing tantalum or titanium and an upper barrier conductor film et1 mainly made of ruthenium is formed so as to cover the side wall and the bottom face of the hole H1 for the first wiring. Subsequently, a conductor film EC1 for the first wiring, which is mainly made of copper, is formed by an electroplating method using the upper barrier conductor film et1 as a sheet layer, and the conductor film EC1 for the first wiring is embedded in the hole H1 for the first wiring by a CMP method. Especially, a conductor film mainly made of ruthenium is formed as the upper barrier conductor film et1 while making it contain 1-5% concentration of carbon. |
