| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device at a low cost with high work efficiency.SOLUTION: A circuit pattern is formed on a silicon substrate 110, and then, an inter-layer insulating film 140 is formed on the silicon substrate 110 with the circuit pattern formed thereon. Ion injection is performed by a first acceleration voltage with respect to the inter-layer insulating film 140, thereby to form a first ion layer 310. Subsequently, ion injection is performed by a second acceleration voltage higher than the first acceleration voltage, thereby to form a second ion layer 320. Then, the inter-layer insulating film 140 is ground till the waveform upper end 320 Pu of the second ion layer 320 appears. |
