发明名称 |
SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS |
摘要 |
A solid-state imaging device includes a pixel including a buried photodiode formed inside a substrate, a buried floating diffusion formed at a depth equal to that of the buried photodiode in the substrate so as to face a bottom of a trench portion formed in the substrate, and a buried gate electrode formed at the bottom of the trench portion in order to transfer a signal charge from the buried photodiode to the buried floating diffusion.
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申请公布号 |
US2011019063(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20100839440 |
申请日期 |
2010.07.20 |
申请人 |
SONY CORPORATION |
发明人 |
WATANABE TAIICHIRO;WATANABE KAZUFUMI |
分类号 |
H04N5/335;H01L31/02;H01L31/10;H01L31/18 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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