发明名称 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
摘要 A solid-state imaging device includes a pixel including a buried photodiode formed inside a substrate, a buried floating diffusion formed at a depth equal to that of the buried photodiode in the substrate so as to face a bottom of a trench portion formed in the substrate, and a buried gate electrode formed at the bottom of the trench portion in order to transfer a signal charge from the buried photodiode to the buried floating diffusion.
申请公布号 US2011019063(A1) 申请公布日期 2011.01.27
申请号 US20100839440 申请日期 2010.07.20
申请人 SONY CORPORATION 发明人 WATANABE TAIICHIRO;WATANABE KAZUFUMI
分类号 H04N5/335;H01L31/02;H01L31/10;H01L31/18 主分类号 H04N5/335
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