发明名称 |
SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method. Provided is a semiconductor wafer comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; and a second semiconductor layer that is formed to contact the first semiconductor layer, is a group 3-5 compound semiconductor layer that lattice matches or pseudo-lattice matches with InP, and can be selectively oxidized relative to the first semiconductor layer. Also provided is a semiconductor device comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; an oxide layer formed by selectively oxidizing, relative to the first semiconductor layer, at least a portion of a second semiconductor layer that is a group 3-5 compound formed to contact the first semiconductor layer and that lattice matches or pseudo-lattice matches with InP; and a control electrode that adds an electric field to a channel formed in the first semiconductor layer.
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申请公布号 |
US2011018033(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20090934233 |
申请日期 |
2009.03.26 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;THE UNIVERSITY OF TOKYO |
发明人 |
TAKENAKA MITSURU;TAKAGI SHINICHI;HATA MASAHIKO;ICHIKAWA OSAMU |
分类号 |
H01L29/205;H01L21/283;H01L21/3205;H01L29/78 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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