| 摘要 |
PURPOSE: A method for manufacturing a metal wiring of a semiconductor device is provided to form simultaneously a copper plug and a line by using a dual damascene process. CONSTITUTION: A method for manufacturing a metal wiring of a semiconductor device comprises the following steps. An opening portion having a contact hole and a trench is formed on a flattened insulating interlayer(10) to expose a surface of a lower wiring. A seed metal layer is formed on the opening portion and an upper insulating interlayer(14) by using an electroless deposition method. The opening portion is fully buried by using an electric deposition method and an electric polishing method. A plug formed with a flat conductive and an upper wiring(26) are formed thereon.
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