发明名称 |
LASER PROCESSING METHOD |
摘要 |
A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 7 7 to 7 12 is made different from an irradiation condition of laser light L for forming the modified regions 7 13 to 7 19 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 µm to 525 µm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 7 1 to 7 19 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 µm to 525 µm, whereby particles are hard to occur. |
申请公布号 |
EP1920874(B1) |
申请公布日期 |
2011.01.26 |
申请号 |
EP20060782385 |
申请日期 |
2006.08.04 |
申请人 |
HAMAMATSU PHOTONICS KABUSHIKI KAISHA |
发明人 |
SAKAMOTO, TAKESHI;MURAMATSU, KENICHI |
分类号 |
B23K26/40;B23K101/40;B28D5/00;H01L21/301 |
主分类号 |
B23K26/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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