Electrical via with lateral extensions

摘要

The via (23) has conductive outgrowths (27) integral with the via extending in pores of a porous region (25) of a semiconductor substrate (W1). The porous region extends from a portion of the periphery of the via. A thin layer (29) is made of a thermally conductive and electrically-insulating material, and insulates the via from the substrate. The porous region extends across a width ranging between 5 and 20 percentages of the diameter of the via. An independent claim is also included for a method for manufacturing an electrical connection via connecting a front surface of a substrate to a rear surface of the substrate.