Tubular electrical via consisting of a plurality of elementary conductive vias

摘要

The connection via (25) has elementary conductive vias (23) that are in the form of solid cylindrical stems, where diameter of the connection via ranges from 10 to 200 micrometers. The elementary conductive vias are arranged, in section in a plane parallel to surfaces of a thin semiconductor substrate (W1), along a ring. Inner volume of the ring is filled with material e.g. silicon, of the substrate. Each elementary conductive via has a diameter comprised between 0.5 and 10 micrometers. An insulating layer (27) made of silicon oxide insulates the connection via from the substrate. An independent claim is also included for a method for manufacturing an electrical connection via connecting a front surface of a substrate to a single contact point arranged in a side of a rear surface of the substrate.