| 发明名称 |
Trench dmos transistor with embedded trench schottky rectifier |
| 摘要 |
The present invention relates to integrated circuits comprising power MOSFETs in parallel with Schottky barrier rectifiers. More particularly, the present invention relates to the integration of trench DMOSFETs and trench Schottky rectifiers upon a single substrate. |
| 申请公布号 |
AU9495101(A) |
申请公布日期 |
2002.04.22 |
| 申请号 |
AU20010094951 |
申请日期 |
2001.10.02 |
| 申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
FWU-IUAN HSHIEH;YAN MAN TSUI;KOON CHONG SO |
| 分类号 |
H01L29/872;H01L21/336;H01L21/8234;H01L27/04;H01L27/06;H01L29/417;H01L29/47;H01L29/78 |
主分类号 |
H01L29/872 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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