发明名称 |
Method and equipment for producing sapphire single crystal |
摘要 |
<p>The method can produce a sapphire single crystal without forming cracks and without using an expensive crucible. The method comprises: putting a seed crystal (24) and a raw material (26) in a crucible (20); heating the crucible (20) by a cylindrical heater (14); and producing temperature gradient in the cylindrical heater (14) to sequentially crystallize a melt. The crucible (20) is composed of a material having a specific linear expansion coefficient which is capable of preventing mutual stress, which is caused by a difference between a linear expansion coefficient of the crucible (20) and that of the sapphire single crystal in a direction perpendicular to a growth axis, from generating in the crucible (20) and the sapphire single crystal, or which is capable of preventing deformation of the crucible (20) without generating a crystal defect caused by the mutual stress.</p> |
申请公布号 |
EP2278050(A1) |
申请公布日期 |
2011.01.26 |
申请号 |
EP20100251237 |
申请日期 |
2010.07.09 |
申请人 |
SHINSHU UNIVERSITY;FUJIKOSHI MACHINERY CORP. |
发明人 |
HOSHIKAWA, KEIGO;MIYAGAWA, CHIHIRO;NAKAMURA, TAICHI |
分类号 |
C30B11/00;C30B29/20 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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