| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device is provided to reduce necessary time of a writing operation by suppressing an over program. CONSTITUTION: A bit line is electrically connected to one end of a current path of a memory cell. A source line is electrically connected to the other end of the current path of the memory cell. A sense amplifier circuit(13) is electrically connected to the bit line and reads data from the memory cell. A row decoder(11) applies read voltage to a word line to make the memory cell on. A controller determines whether the memory cell is degraded or not by measuring a cell current flowing in the memory cell of an on state.
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