| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a MISFET by which damages are hardly given to a gate insulating film at the time of forming a metallic film which becomes a gate electrode. SOLUTION: After an insulating film 102 containing the metal oxide film of a hafnium oxide, etc., is formed on a semiconductor substrate (101), the surface of the insulating film 102 is processed to the gate electrode by reforming the surface to a metallic film 103 of a hafnium metallic film etc., by performing plasma treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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