TRANSPARENT THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A transparent thin film transistor and a fabrication method thereof are provided to a process time and costs by lowering a temperature at which a thin film is generated. CONSTITUTION: A gate electrode, a source electrode, and a drain electrode provide a transparent thin film transistor such as transparent electrode in a solution process. The electrodes are a complex In-oxide precursor including Zn or Sn. If the electrodes include Zn, the composition ratio is between 34:66 mol% ~ 14:86 mol% of Zn and In and If including Sn, the composition ratio is between 20:80 mol% ~ 1:99 mol% of Sn and In.