发明名称 |
Multi-bit flash memory device and program and read methods thereof |
摘要 |
The flash memory device of the present invention is configured to program a plurality of bits per unit cell, wherein a program condition of a selected bit is set according to whether a program for the most previous bit to the selected bit for programming is skipped or not skipped. As a result, an accurate programming and reading operation is possible even in case a program for a middle bit is skipped.
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申请公布号 |
US7876614(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20080255211 |
申请日期 |
2008.10.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG-KU;CHAE DONG-HYUK;LEE SEUNG-JAE |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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