| 摘要 |
A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.
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